Memristive switching of MgO based magnetic tunnel junctions

Memristive switching of MgO based magnetic tunnel junctions

The search for nonvolatile memory concepts has a massive impact on the development of nanoscopic systems with adjustable electrical properties. Capacitor-like structures composed of insulating materials sandwiched between metallic electrodes are envisioned to overcome the limitations associated with conventional charge storage devices and may open the road to neuromorphic computing. Together wi...

Magnetic tunnel junctions with MgO-EuO composite tunnel barriers

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the mo...

Thermoelectricity and disorder of FeCo/MgO/FeCo magnetic tunnel junctions

We compute the thermoelectric transport parameterized by the Seebeck coefficient and thermal/electric conductance of random-alloy FeCo/MgO/FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-Büttiker formalism. The thermopower is found to be typically smaller than those of Fe/MgO/Fe(001) MTJs. The (magneto-)Seebeck effect is sensitive to the details of ...

Interlayer Exchange Coupling in Fe/MgO/Fe Magnetic Tunnel Junctions

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic ...